GE Research Sets New Record for Heat-Resistant Transistor.

• Author: Eckert, Cambrie

ARLINGTON, Virginia -- A research lab has developed a transistor that can withstand temperatures of up to 800 degrees Celsius.

GE Research, a part of GE Aerospace, has developed a silicon carbide metal-oxide-semiconductor fieldeffect transistor, which helps control electrical power components. The ability to withstand temperatures almost 200 degrees higher than traditional versions of the component--better known to engineers as SiC MOSFETs --will allow them to perform better on hypersonic and space vehicles, company officials said in an interview. Emad Andarawis, principal engineer for GE Research, said one application for the transistor will be for planetary exploration, specifically high temperatures and pressures found on Venus. GE Research has been working with NASA to develop the technology. It would allow the agency to thoroughly study the planet's composition and structure of its surface without destroying the transistor.

Another application of interest to the military would be hypersonic vehicles, which must withstand high temperatures as atmospheric friction causes them to overheat, said Todd Alhart, innovation communications director for GE Research.

GE Aerospace has worked...