About the Author

AuthorSteven H. Voldman
ProfessionIs an IEEE Fellow and graduate of Massachusetts Institute of Technology (MIT)
Pages17-18
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Dr Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge
(ESD) for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon
Germanium Technology.” He received his B.S. in Engineering Science from University
of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology
(MIT); a second degree EE Degree (Engineer D egree) from MIT; a MS Engineering
Physics (1986), and a PhD in electrical engineering (EE) (1991) from University of
Vermont under IBM’s Resident Study Fellow program.
Voldman was a member of the semiconductor development of IBM for 25 years from
1982 to 2007. He was also a member of the development team of Qimonda and Intersil
Corporations. He was a consultant for Taiwan Semiconductor Manufacturing
Corporation (TSMC) in Hsinchu, Taiwan, and for the Samsung Electronics Corporation
in Dongtan, South Korea.
Steve Voldman was one of the first to be designated as an IBM Master Inventor.
DrSteven H. Voldman was also awarded the title of IBM Top Inventor for three con-
secutive years for being one of the top 10 inventors in the IBM Corporation. He is
presently a recipient of 260 issued US patents and has written more than 150 technical
papers. At IBM, Dr Voldman achieved over 67 IBM Invention Achievement Award
plateaus.
Steven H. Voldman provides tutorials and lectures on inventions, innovations, and
patents in Malaysia, Sri Lanka, Senegal, Swazil and, Benin, and the United States. He initi-
ated a lecture program to provide lectures and interaction to university faculty and
students internationally, and has lectured to over 45 universities in the United States,
Korea, Singapore, Taiwan, Malaysia, Philippines, Thailand, India, China, Senegal, Benin,
and Swaziland.
Since 2007, he has served as an expert witness in patent litigation and has also founded
a limited liability corporation (LLC) consulting business supporting patents, patent
writing, and patent litigation. In his LLC, Voldman served as an expert witness for cases
on DRAM development, semiconductor development, integrated circuits , and electro-
static discharge in over 10 cases. He was an expert witness for Hogan Lovells LLP,
Dechert LLP, Quinn Emanuel Urquhart and Sullivan LLP, Sydney and Austin LLP, and
Latham and Watkins LLP.
About theAuthor

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